smd type transistors 1 www.kexin.com.cn features contains input resistance (r1), base-to-emitter resistance (rbe). contains diode between collector and emitter. low saturation voltage. large current capacity. small-sized package making it easy to provide highdensity, small-sized hybrid ics. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v collector current i c -3 a collector current (pulse) i cp -5 a collector dissipation p c *1.5 w jumction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board (250mm 2 x0.8mm) electrical connection pnp/npn epitaxial planar silicon transistors 2SB1394
2 smd type transistors www.kexin.com.cn marking marking bn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-30v,i e =0 -1 a v ce =-2v,i c = -0.5a 70 v ce =-2v,i c =-2a 50 gain bandwidth product f t v ce =-2v,i c = -0.5a 100 mhz output capacitance c ob v cb = -10v , f = 1mhz 55 pf collector-emitter saturation voltage v ce(sat) i c =-1a,i b = -50ma -0.18 -0.4 v base-emitter on state voltage v be(on) v ce =-2v,i c = -1a -0.7 -1.5 -4 v collector-to-base breakdown voltage v (br)cbo i c =-10a,i e =0 -40 v collector-to-emitter breakdown voltage v (br)ceo1 i c =-10a,r be = -40 v collector-to-emitter breakdown voltage v (br)ceo2 i c =-10ma,r be = -30 diode forward voltage v f i f =0.5a -1.5 v base-emitter resistance r be 0.8 k base resistance r1 60 90 120 dc current gain h fe 2SB1394
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